End-to-End Modeling of a Volatile TiO2 Memristor for Neuromorphic Circuit Simulation

Abstract

Memristors are promising devices for applications such as non-volatile memory, neuromorphic computing, logic circuits, and analog signal processing. The development of such systems requires accurate simulations based on models that reproduce the electrical behavior of real devices under both continuous and pulsed excitation. This work presents the development of a simulation environment for a volatile TiO2-based memristor. Experimental measurement data are analyzed to verify the memristive behavior of the device and to identify a suitable model. The model parameters are then optimized to match the measured characteristics. The resulting model is implemented in SPICE and validated by comparing simulation results with measurement data. The comparison shows a good agreement between simulation and experiment, demonstrating that the developed model is suitable for reproducing the electrical behavior of the investigated memristor and can be applied in circuit-level simulations, as demonstrated by a leaky integrate-and-fire neuron.