Temperature-doping phase diagram and endurance in Ce-doped HfO2

Abstract

The structural and ferroelectric properties of epitaxial Hf1-xCexO2 (CHO) thin films in the ultrathin regime are investigated as a function of Ce concentration (5% <= x <= 20%) and temperature. A temperature-doping phase diagram is established for 10 nm films, showing a systematic evolution from the ferroelectric orthorhombic phase to tetragonal and cubic phases with increasing Ce content. The orthorhombic-tetragonal transition temperature decreases from ~800°C at x = 5% to $~300°C$ at x = 15%, indicating strong stabilization of higher-symmetry phases with doping. Consistently, the remanent polarization decreases from ~15 to $3.8 μC/cm2$ as x increases from 5% to 20%. In contrast, the endurance improves significantly, with higher Ce concentrations exhibiting markedly enhanced cycling stability up to 108 cycles. The opposing trends of polarization and endurance are correlated with reduced orthorhombic distortion, suggesting that fatigue mitigation in Ce-doped HfO2 is linked to structural evolution. These results provide a framework for optimizing composition and reliability in ultrathin ferroelectric HfO2 devices.