"Anomalous Solid Solution" in Ultra-High Melting Point Oxides: A New Strategy for Developing Ultra-High Temperature Thermal Protection Coatings
Yubo Wang, Hong Meng, Pengfei He, Shujun Hu, Chuan Sun, Ximing Duan, Xiaopeng Lu, Dingwang Yuan, Wangyu Hu, Xiubing Liang
Abstract
The high-temperature performance of ultra-high temperature ceramics (UHTCs) in atmospheric environment is fundamentally governed by their melting points of oxidation products. Typical high-melting-point oxides, such as ZrO2, undergo phase transformations at elevated temperatures, leading to structural instability. Although doping with rare-earth or transition-metal cations can suppress these transformations, it often results in a reduction in melting point, thereby limiting practical service temperature. Here, ytterbia-stabilized zirconia (YbSZ) coatings are prepared via atmospheric plasma spraying, achieving a remarkable increase in the melting point of ZrO2 to approximately 2850 and raising the ultimate plasma and oxyacetylene ablation temperature up to nearly 2780 and 3200 , which is the highest temperature resistance property as reported. Notably, this performance enhancement originates from a synergistic mechanism of strengthened ionic-covalent mixed bonding and improved oxygen vacancy stability. Based on these findings, the concept of "anomalous solid solution" is firstly proposed to be used in the area of ultra-high temperature protection, which provides new insights into the compositional design of UHTC systems.
Create a lesson
Related papers
Nanoscale Sr2IrO4 Freestanding Thin-Films for Flexible Electronics
Sujan Shrestha, Matthew Coile, Menglin Zhu et al.
Impact of Chemical Clustering on the Structural, Topological, and Functional Properties of Ba(ZrxTi1-x)O3: An Atomistic Simulation Study
Matias Baldassin, Rodrigo Machado, Marcelo Sepliarsky et al.
Correlations of Spectroscopic and Dielectric Properties of Hafnia-Zirconia Nanoparticles
Yuriy O. Zagorodniy, Eugene A. Eliseev, Petr Jiricek et al.
Face-to-face anneal temperature controls lattice parameter in Ta(C,N) virtual substrates for AlGaN power electronics
Noah Zahn, Julia L. Martin, Michelle A. Smeaton et al.
Scandium diboride: a semi-metallic, lattice, thermally matched substrate for vertical AlGaN power electronics
MVS Chandrashekhar, Daniel Joel Harrison, Ahamed Raihan et al.
III-V antiphase boundaries are not generated by Si or Ge substrate step edges
Charles Cornet, Sreejith Pallikkara Chandrasekharan, Audrey Gilbert et al.