Symmetry Rules for Cavity Materials Engineering with Linearly Polarized Vacuum Fields
Jingkai Quan, Chongxiao Fan, Benshu Fan, I-Te Lu, Dante M. Kennes, Angel Rubio
Abstract
Cavity materials engineering, aiming to manipulate material properties by coupling to vacuum fluctuations inside a cavity, is a rapidly advancing field. Despite significant progress, most studies to date have focused on specific materials and cavity configurations. Here, through a comprehensive group-theoretical analysis, we establish general symmetry rules for cavity materials engineering with linearly polarized cavity photon modes. By analyzing the symmetry of the effective photon-free quantum-electrodynamics Hamiltonian, we provide a complete classification of the symmetry-breaking patterns induced by cavity modes for all crystallographic point groups. The power of this framework is then demonstrated by quantum-electrodynamical density functional theory calculations. In particular, we explain the distinct cavity-induced lifting of band degeneracies in cubic BaTiO3 for different cavity mode configurations, and the cavity-modified infrared and Raman spectra of monolayer MoS2 due to symmetry breaking. Our results highlight the central role of symmetry in cavity materials engineering and provide general guidelines for future studies in this field.
Create a lesson
Related papers
Nanoscale Sr2IrO4 Freestanding Thin-Films for Flexible Electronics
Sujan Shrestha, Matthew Coile, Menglin Zhu et al.
Impact of Chemical Clustering on the Structural, Topological, and Functional Properties of Ba(ZrxTi1-x)O3: An Atomistic Simulation Study
Matias Baldassin, Rodrigo Machado, Marcelo Sepliarsky et al.
Correlations of Spectroscopic and Dielectric Properties of Hafnia-Zirconia Nanoparticles
Yuriy O. Zagorodniy, Eugene A. Eliseev, Petr Jiricek et al.
Face-to-face anneal temperature controls lattice parameter in Ta(C,N) virtual substrates for AlGaN power electronics
Noah Zahn, Julia L. Martin, Michelle A. Smeaton et al.
Scandium diboride: a semi-metallic, lattice, thermally matched substrate for vertical AlGaN power electronics
MVS Chandrashekhar, Daniel Joel Harrison, Ahamed Raihan et al.
III-V antiphase boundaries are not generated by Si or Ge substrate step edges
Charles Cornet, Sreejith Pallikkara Chandrasekharan, Audrey Gilbert et al.