Occupation-Driven Josephson Diode in a Symmetric Junction
Jianxiong Zhai, Zelei Zhang, Jiawei Yan
Abstract
We propose a Josephson diode mechanism in which nonreciprocity arises not from a conventional asymmetric Andreev spectrum but from nonequilibrium occupation of the current-carrying states engineered by attached reservoirs. We realize this mechanism in a double-quantum-dot junction, where a phase-textured nonlocal reservoir acts as a quantum Zeno selector: rapid dissipation freezes out the bright state directly coupled to the jump operator L, while preserving an orthogonal dark Andreev channel whose supercurrent remains comparable to that of the lossless junction. In the infinite-gap limit, the steady-state current factorizes as I ss=IA Pγ, so that even when the Andreev current IA is strictly reciprocal, the phase asymmetry of Pγ alone can produce a Josephson diode effect through reservoir engineering. We further show that local Coulomb repulsion can drive the system toward a nearly ideal diode regime via a dark-pair resonance. Using Keldysh-Lindblad calculations, we demonstrate that our results remain robust for realistic junctions with a finite superconducting gap and dissipation.
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