Universal tuning of Förster resonance energy transfer in gate-programmable conductor-dielectric-conductor heterostructures
Alexis J. Agosto, Daniel Gunlycke, Michael N. Leuenberger
Abstract
We develop a quantum-electrodynamical theory for universal tuning of spontaneous emission and Förster resonance energy transfer (FRET) in a material-agnostic conductor-dielectric-conductor heterostructure. The platform consists of a dielectric spacer of thickness W bounded by two gate-tunable two-dimensional conductors. The only microscopic input from the surrounding materials is the transverse-magnetic and transverse-electric reflection amplitudes r/(qρ,ω) of the two sheets. Starting from the QED photon propagator, we derive the retarded Maxwell dyadic, the vacuum/Hadamard field propagator, and the time-ordered Feynman propagator in the same geometry. The spontaneous-emission rate is controlled by the local vacuum spectral density, while FRET is controlled by the nonlocal retarded/advanced product R(D,A;ωD)\,A(ωD) A(A,D;ωD). In the transparent limit r 0, the near-field FRET rate recovers the bulk xρ-6 law. In the Dirichlet/PEC branch r -1, the gapless transverse mode is removed and the donor-acceptor coupling acquires a Bessel-K envelope, giving an exponentially screened FRET rate ΓD A(-2πxρ/W) at large lateral separation. In the opposite Neumann/PMC-like branch r 1-, a nearly gapless transverse mode survives and produces a wide quasi-two-dimensional logarithmic propagator, enhancing the nonlocal electromagnetic coupling over a gate-programmable range xρ,* W/(1-r). For graphene-Er implementations, the same retarded Green tensor also separates dissipative on-shell Er-to-graphene decay, governed by its absorptive part, from dispersive virtual-plasmon-mediated Er-Er coupling, governed by its reactive part; a plasmonic band gap can suppress the former while retaining the latter.
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