A relational fabrication-to-modeling database for memristor devices

Abstract

Resistive random access memory (RRAM) devices, also known as memristors, are highly dependent on fabrication, location on the wafer, and measurement protocols. However, openly available large-scale memristor datasets remain scarce, particularly those that combine experimental metadata with electrical measurements and preserve explicit links across the experimental workflow. Here, we present a comprehensive relational database of automated electrical characterization data from oxide-based memristors. The database links 6,190 memristor devices across TiN/HfOx/TiN, Pt/TiOx/AlOy/Pt, and Pt/TiOx/Pt stacks to 161,006 validated experiments and over 169 million electrical point records. It integrates fabrication, wafer mapping, electrical characterization, and modeling to describe electroforming, current-voltage non-linearity, memory windows (R_off/R_on), switching dynamics, and short-term volatility. Released as a normalized and indexed SQLite database with schema documentation, graphical user interfaces, and examples of empirical modeling, this resource supports provenance-aware querying, statistical analysis, and data-driven applications for the development of future memristor technologies.