Colossal reversible conductivity switching by room-temperature oxygen-vacancy ordering in Aurivillius oxide films

Abstract

Oxygen vacancies are central to the functionality of oxides, yet they typically exist as randomly distributed point defects, limiting the ability to precisely manipulate their collective behavior. Here, we report the room-temperature formation of a long-range-ordered oxygen-vacancy superstructure in single-crystalline Aurivillius-phase Bi2WO6 thin films via a mild nitrogen-plasma treatment. This structural transformation unlocks a colossal, reversible modulation of electrical conductivity by more than nine orders of magnitude, accompanied by a striking optical transition from transparent to black. Atomic-resolution imaging and spectroscopy reveal that the vacancies selectively order within the perovskite-like tungsten oxide layers, forming a coherent defect lattice that is absent in the pristine film. Oxygen-plasma treatment removes the vacancy superstructure and restores the initial state, whereas subsequent nitrogen-plasma treatment reconstructs it, enabling repeatable room-temperature switching between distinct structural, electronic and optical states. The phenomenon is also observed in another Aurivillius member, Bi2MoO6, suggesting its generality across the Aurivillius family. These findings establish a new paradigm for atomic-scale defect engineering - using gentle plasma chemistry to construct ordered defect lattices, opening avenues for reversible property modulation in complex oxides.