Testbeam characterization of a 3D silicon sensor read out by Timepix4

Abstract

Testbeam results from a $300\,μ\mathrm{m}$-thick 3D silicon sensor bump-bonded to a Timepix4 ASIC, are presented. The hit detection efficiency, spatial resolution, and timing performance of the 3D sensor are studied for several track angles, bias voltages and charge thresholds. The time measurements are corrected for Timepix4 clock-frequency variations and timewalk, while for the spatial studies, nonlinear charge-sharing corrections are determined. At perpendicular incidence, the time resolution of the 3D detector is equal to $245\,\mathrm{ps}$ with a $97\%$ hit detection efficiency. An optimal angle of $8^\circ$ with respect to the beam direction of the 3D detector was found, in which the time resolution improves by $6\%$ compared to normal incidence, while the hit detection efficiency reaches above $99\%$ and the spatial resolution is approximately $7\,μ\mathrm{m}$. Intrapixel studies show that a time resolution of $153\,\mathrm{ps}$ at the most probable value of the signal charge can be achieved for hits between the electrodes at normal incidence, while the timing performance of these best-performing regions deteriorate upon sensor rotation. The timing properties at different depths of the 3D sensor have been investigated with tracks at grazing-angle incidence, revealing a dependence of the time resolution along the sensor depth.