Non-destructive 3D doping imaging of silicon sensors

Abstract

Silicon sensors are the foundational detection medium for X-rays and charged particles. While their bulk dopant distribution determines device performance, it is conventionally assumed homogeneous because traditional profiling is destructive, spatially restricted, and insensitive at the relevant concentrations. Here we introduce a non-destructive 3D doping imaging technique that turns the readout electronics of a charge-integrating hybrid pixel detector into a massively parallelized capacitance-voltage profiler. With a few tens of micrometres of 3D resolution over wafer-scale areas at concentrations on the order of $10^{11}$ cm$^{-3}$, we image the bulk doping concentration of operational sensors. Macroscopically, we resolve depth-evolving concentric doping rings; microscopically, we uncover scattered doping anomalies that distort local electric fields. The rings modulate the depletion voltage, while the anomalies disrupt local charge collection, a previously overlooked cause of pixel yield and performance degradation. By bridging manufacturing signatures with microscopic defects, this approach provides a non-destructive framework for sensor characterization and yield optimization.