Unusual T_c variation with hole concentration in Bi_2Sr_{2-x}La_xCuO_{6+δ}

Abstract

We have investigated the $T_c$ variation with the hole concentration $p$ in the La-doped Bi 2201 system, Bi$_2$Sr$_{2-x}$La$_x$CuO$_{6+δ}$. It is found that the Bi 2201 system does not follow the systematics in $T_c$ and $p$ observed in other high-$T_c$ cuprate superconductors (HTSC's). The $T_c$ vs $p$ characteristics are quite similar to what observed in Zn-doped HTSC's. An exceptionally large residual resistivity component in the inplane resistivity indicates that strong potential scatterers of charge carriers reside in CuO$_2$ planes and are responsible for the unusual $T_c$ variation with $p$, as in the Zn-doped systems. However, contrary to the Zn-doped HTSC's, the strong scatter in the Bi 2201 system is possibly a vacancy in the Cu site.