Interaction-assisted propagation of Coulomb-correlated electron-hole pairs in disordered semiconductors
D. Brinkmann, J. E. Golub, S. W. Koch, P. Thomas, K. Maschke, I. Varga
Abstract
A two-band model of a disordered semiconductor is used to analyze dynamical interaction induced weakening of localization in a system that is accessible to experimental verification. The results show a dependence on the sign of the two-particle interaction and on the optical excitation energy of the Coulomb-correlated electron-hole pair.
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