Dynamics of Rough Interfaces in Chemical Vapor Deposition: Experiments and a Model for Silica Films
Fernando Ojeda, Rodolfo Cuerno, Roberto Salvarezza, Luis Vazquez
Abstract
We study the surface dynamics of silica films grown by low pressure chemical vapor deposition. Atomic force microscopy measurements show that the surface reaches a scale invariant stationary state compatible with the Kardar-Parisi-Zhang (KPZ) equation in three dimensions. At intermediate times the surface undergoes an unstable transient due to shadowing effects. By varying growth conditions and using spectroscopic techniques, we determine the physical origin of KPZ scaling to be a low value of the surface sticking probability, related to the surface concentration of reactive groups. We propose a stochastic equation that describes the qualitative behavior of our experimental system.
Create a lesson
Related papers
Droplets obstruct Onsager-type solutions of the Ising model in a magnetic field
Ran Luo, Jiahua Tian
Physical limits to stochastic classifiers
Timur Aslyamov, Massimiliano Esposito
Absolute area under a scaled Brownian motion with resetting
Vicenç Méndez, Javier Cristín
Understanding the Mpemba Effect through a Rule of Thumb
Ran Yaacoby
Beyond the lemon: Spectra of random Lindblad operators with a Hamiltonian component
Mykhailo Hontarenko, Wojciech Tarnowski, Sergey Denisov et al.
Towards synergy between theory and experiments: First-passage processes under resetting with stochastic return protocols
Ashutosh Dubey, Arnab Pal