Low field negative magnetoresistance in double layer structures
G. M. Minkov, A. V. Germanenko, O. E. Rut, O. I. Khrykin, V. I. Shashkin, V. M. Danil'tsev
Abstract
The weak localization correction to the conductivity in coupled double layer structures is studied both experimentally and theoretically. Statistics of closed paths has been obtained from the analysis of magnetic field and temperature dependencies of negative magnetoresistance for magnetic field perpendicular and parallel to the structure plane. The comparison of experimental data with results of computer simulation of carrier motion over two 2D layers with scattering shows that inter-layers transitions play decisive role in the weak localization.
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