c-axis penetration depth in Bi2Sr2CaCu2O8+δ single crystals measured by ac-susceptibility and cavity perturbation technique

Abstract

The c-axis penetration depth λc in Bi2Sr2CaCu2O8+δ (BSCCO) single crystals as a function of temperature has been determined using two techniques, namely, measurements of the ac-susceptibility at a frequency of 100 kHz and the surface impedance at 9.4 GHz. Both techniques yield an almost linear function λc(T) T in the temperature range T<0.5 Tc. Electrodynamic analysis of the impedance anisotropy has allowed us to estimate λc(0)≈ 50 μm in BSCCO crystals overdoped with oxygen (Tc≈ 84 K) and λc(0)≈ 150 μm at the optimal doping level (Tc≈ 90 K).

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