A spin Esaki diode
Makoto Kohda, Yuzo Ohno, Koji Takamura, Fumihiro Matsukura, Hideo Ohno
Abstract
We demonstrate electrical electron spin injection via interband tunneling in ferromagnetic/nonmagnetic semiconductor Esaki diodes. An interband tunnel junction between ferromagnetic p+-(Ga,Mn)As and nonmagnetic n+-GaAs under reverse-bias allows spin-polarized tunneling of electrons from the valence band of (Ga,Mn)As to the conduction band of n+-GaAs. The spin polarization of tunneled electrons is probed by circular polarization of electroluminescence (EL) from an n-GaAs/InGaAs/p-GaAs light emitting structure integrated with the diode. Clear hysteresis loop with +-6.5% remanence is observed in the magnetic-field dependence of the EL polarization at 6 K, below the Curie temperature of (Ga,Mn)As.
Create a lesson
Related papers
Longitudinal and Transverse Thermoelectric Properties in Topological Quantum Materials
Jyoti Duhan, Anil Kumar B. M., Satya N. Guin et al.
Thermally Conditioned Time-Series Forecasting of Grain Growth in Polycrystalline Materials
Eliane Younes, Elie Hachem, Marc Bernacki
Evolutionary Design of Interpretable Spatial Descriptors for Structure-Property Relationship Discovery
Aditya Raghavan, Sergei V Kalinin
Millikelvin magnetometry up to 30~T using a multi-cross micro-Hall sensor
Bingbing Tong, Yinina Ma, Zhenhua Zhao et al.
First-principles study of the formation of Group-IV--vacancy color centers in diamond
Xiangru Han, Adam Gali
Anomalous thermal transport in isotope-enriched germanium carbide
Wenjiang Zhou, Bai Song