Realization of an Interacting Two-Valley AlAs Bilayer System
K. Vakili, Y. P. Shkolnikov, E. Tutuc, E. P. De Poortere, M. Shayegan
Abstract
By using different widths for two AlAs quantum wells comprising a bilayer system, we force the X-point conduction-band electrons in the two layers to occupy valleys with different Fermi contours, electron effective masses, and g-factors. Since the occupied valleys are at different X-points of the Brillouin zone, the interlayer tunneling is negligibly small despite the close electron layer spacing. We demonstrate the realization of this system via magneto-transport measurements and the observation of a phase-coherent, bilayer ν=1 quantum Hall state flanked by a reentrant insulating phase.
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