Fermi surface evolution in the antiferromagnetic state for the electron-doped t-t'-t''-J model
Qingshan Yuan, Yan Chen, T. K. Lee, C. S. Ting
Abstract
By use of the slave-boson mean-field approach, we have studied the electron-doped t-t'-t''-J model in the antiferromagnetic (AF) state. It is found that at low doping the Fermi surface (FS) pockets appear around (π,0) and (0,π), and upon increasing doping the other ones will form around (π 2,π 2). The evolution of the FS with doping as well as the calculated spectral weight are consistent with the experimental results.
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