STM Studies of Near-Optimal Doped Bi2Sr2CaCu2O8+δ
A. Kapitulnik, A. Fang, C. Howald, M. Greven
Abstract
In this paper we summarize our STM studies of the density of electronic states in nearly optimally doped Bi2Sr2CaCu2O8+δ in zero field. We report on the inhomogeneity of the gap structure, density of states modulations with four-lattice constant period, and coherence peak modulation.
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