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Dependence of the superconducting transition temperature on the doping level in single crystalline diamond films

Etienne Bustarret, Jozef Kacmarcik, Christophe Marcenat, Etienne Gheeraert, Catherine Cytermann, Jacques Marcus, Thierry Klein

cond-mat.supr-conarXiv:cond-mat/0408517

Abstract

Homoepitaxial diamond layers doped with boron in the 1020-1021 /cm3 range are shown to be type II superconductors with sharp transitions (~0.2K) at temperatures increasing from 0 to 2.1 K with boron contents. The critical concentration for the onset of superconductivity is about 5-7 1020 /cm3, close to the metal-insulator transition. The H-T phase diagram has been obtained from transport and a.c. susceptibility measurements down to 300mK. These results bring new quantitative constraints on the theoretical models proposed for superconductivity in diamond.

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