Exchange Biasing of the Ferromagnetic Semiconductor (Ga,Mn)As by MnO
K. F. Eid, M. B. Stone, O. Maksimov, T. C. Shih, K. C. Ku, W. Fadgen, C. J. Palmstrom, P. Schiffer, N. Samarth
Abstract
We provide an overview of progress on the exchange biasing of a ferromagnetic semiconductor (Ga1-xMnxAs) by proximity to an antiferromagnetic oxide layer (MnO). We present a detailed characterization study of the antiferromagnetic layer using Rutherford backscattering spectrometry, x-ray photoelectron spectroscopy, transmission electron microscopy, and x-ray reflection. In addition, we describe the variation of the exchange and coercive fields with temperature and cooling field for multiple samples.
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