Resonant intrinsic spin Hall effect in p-type GaAs quantum well structure
Xi Dai, Zhong Fang, Yu-Gui Yao, Fu-Chun Zhang
Abstract
We study intrinsic spin Hall effect in p-type GaAs quantum well structure described by Luttinger Hamiltonian and a Rashba spin-orbit coupling arising from the structural inversion symmetry breaking. The Rashba term induces an energy level crossing in the lowest heavy hole subband, which gives rise to a resonant spin Hall conductance. The resonance may be used to identify the intrinsic spin Hall effect in experiments.
Create a lesson
Related papers
Magnon Klein paradox
D. Wang
Transport kinetics in excitonic Mott insulator
W. J. Brunner, Zhiwen Zhou, Luc M. Nguyen et al.
Direct Observation of Chirality-Dependent Berry Curvature Dipole via Cross-Axial Nonlinear Hall Effect in Trigonal Te
Jaehyun Lee, Junhee Shin, Daryll J. C. Dalayoan et al.
Establishing the role of thickness in LaOBr; an alternative gate dielectric for vdW heterostructures
Isaac Antoine Lagaud, Justin Boddison-Chouinard, Antoine Labbé et al.
Electric-dipole-induced nuclear electric resonance in silicon
Jiyun Su, Shihang Zhang, Peihao Huang
Parametric Glassiness in Graphene-based Electronic Lévy Glass
Caue N. da Silva, Diego B. Fonseca, Adauto J. F. de Souza et al.