Quantum kinetic theory of phonon-assisted carrier transitions in nitride-based quantum-dot systems
J. Seebeck, T. R. Nielsen, P. Gartner, F. Jahnke
Abstract
A microscopic theory for the interaction of carriers with LO phonons is used to study the ultrafast carrier dynamics in nitride-based semiconductor quantum dots. It is shown that the efficiency of scattering processes is directly linked to quasi-particle renormalizations. The electronic states of the interacting system are strongly modified by the combined influence of quantum confinement and polar coupling. Inherent electrostatic fields, typical for InGaN/GaN quantum dots, do not limit the fast scattering channels.
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