Dynamical mean-field studies of metal-insulator transitions
V. Dobrosavljevic, G. Kotliar
Abstract
We discuss the successes of the dynamical mean field (DMF) approach to metal insulator transitions in both the clean and the disordered limit. In the latter case, standard DMF equations are generalized in order to incorporate both the physics of strong correlation and Anderson localization effects. The results give new insights into the puzzling features of doped semiconductors.
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