Negative Domain Wall Contribution to the Resistivity of Microfabricated Fe Wires
U. Ruediger, J. Yu, S. Zhang, A. D. Kent, S. S. P. Parkin
Abstract
The effect of domain walls on electron transport has been investigated in microfabricated Fe wires (0.65 to 20 μm linewidths) with controlled stripe domains. Magnetoresistance (MR) measurements as a function of domain wall density, temperature and the angle of the applied field are used to determine the low field MR contributions due to conventional sources in ferromagnetic materials and that due to the erasure of domain walls. A negative domain wall contribution to the resistivity is found. This result is discussed in light of a recent theoretical study of the effect of domain walls on quantum transport.
Create a lesson
Related papers
Probing the wave-vector gap in nanoscale magnonics
Ondřej Wojewoda, Samer Kurdi, Toeno van der Sar et al.
Approaching Irrational Quantization
Zhihong Wu, Zhimou Chen, Siyuan Zhang et al.
A Solvable Model in the Half-filled Landau Level
Anders Karlhede
Microscopic foundation for orbitronics: orbital exchange interactions, orbital-dependent transport, and orbital switching
Hantao Zhang, Ran Cheng
Valley-resolved high harmonics probe symmetry breaking beyond the Dirac cone
Pablo Pais, Alfredo Iorio, Marcelo F. Ciappina
Magnon Klein paradox
D. Wang