From the Kondo Regime to the Mixed-Valence Regime in a Single-Electron Transistor
D. Goldhaber-Gordon, J. Goeres, M. A. Kastner, Hadas Shtrikman, D. Mahalu, U. Meirav
Abstract
We demonstrate that the conductance through a single-electron transistor at low temperature is in quantitative agreement with predictions of the equilibrium Anderson model. When an unpaired electron is localized within the transistor, the Kondo effect is observed. Tuning the unpaired electron's energy toward the Fermi level in nearby leads produces a cross-over between the Kondo and mixed-valence regimes of the Anderson model.
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