Activated Behavior of the 0.7 2(e2)/h Conductance Anomaly in Quantum Point Contacts
A. Kristensen, H. Bruus, A. Forchel, J. B. Jensen, P. E. Lindelof, M. Michel, J. Nygard, C. B. Sorensen
Abstract
The 0.7 conductance anomaly in the quantized conductance of trench etched GaAs quantum point contacts is studied experimentally. The temperature dependence of the anomaly measured with vanishing source-drain bias reveals the same activated behavior as reported earlier for top-gated structures. Our main result is that the zero bias, high temperature 0.7 anomaly found in activation measurements and the finite bias, low temperature 0.9 anomaly found in transport spectroscopy have the same origin: a density dependent excitation gap.
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