Non-Universal Power Law of the "Hall Scattering Rate" in a Single-Layer Cuprate Bi2Sr2-xLaxCuO6
Yoichi Ando, T. Murayama
Abstract
In-plane resistivity ρab, Hall coefficient, and magnetoresistance (MR) are measured in a series of high-quality Bi2Sr2-xLaxCuO6 crystals with various carrier concentrations, from underdope to overdope. Our crystals show the highest Tc (33 K) and the smallest residual resistivity ever reported for Bi-2201 at optimum doping. It is found that the temperature dependence of the Hall angle obeys a power law Tn with n systematically decreasing with increasing doping, which questions the universality of the Fermi-liquid-like T2 dependence of the "Hall scattering rate". In particular, the Hall angle of the optimally-doped sample changes as T1.7, not as T2, while ρab shows a good T-linear behavior. The systematics of the MR indicates an increasing role of spin scattering in underdoped samples.
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