Photoemission Studies on Bi2Sr2CaCuZnO - Electronic Structure Evolution and Temperature Dependence
P. J. White, Z. X. Shen, D. L. Feng, C. Kim, M. Z. Hasan, J. M. Harris, A. G. Loeser, H. Ikeda, R. Yoshizaki, G. D. Gu, N. Koshizuka
Abstract
An angle resolved photoelectron spectroscopy study was conducted on BiSrCaCuZnO. A small amount of Zn substitution for Cu almost completely suppresses the otherwise sharp spectral peak along the (0,0) to (pi,pi) direction in BiSrCaCuZnO, while superconductivity with Tc as high as 83K survives. This behavior contrasts markedly from that seen in cases where the impurities are located off the CuO plane, as well as when the CuO planes are underdoped. This effect is also accompanied by changes of low energy excitations at (pi,0), near the anti-node position of the d-wave pairing state. With Zn doping the size of the superconducting gap is significantly suppressed, the width of the quasiparticle peak in the superconducting state becomes wider, and the dip at higher binding energy is diminished. In addition, enhanced temperature induced spectral changes also occur. We show intriguing systematic lineshape changes with temperature that persist to a very high energy scale - a result consistent with the idea that Zn enhances the local charge inhomogeneity.
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