Effects of carrier concentration on the superfluid density of high-Tc cuprates
C. Panagopoulos, B. D. Rainford, J. R. Cooper, W. Lo, J. L. Tallon, J. W. Loram, J. Betouras, Y. S. Wang, C. W. Chu
Abstract
The absolute values and temperature, T, dependence of the in-plane magnetic penetration depth, λab, of La2-xSrxCuO4 and HgBa2CuO4+δ have been measured as a function of carrier concentration. We find that the superfluid density, ρs, changes substantially and systematically with doping. The values of ρs(0) are closely linked to the available low energy spectral weight as determined by the electronic entropy just above Tc and the initial slope of ρs(T)/ρs(0) increases rapidly with carrier concentration. The results are discussed in the context of a possible relationship between ρs and the normal-state (or pseudo) energy gap.
Create a lesson
Related papers
High-Temperature Superconductivity of the Fe-Se-H compound
S. I. Bondarenko, A. A. Prokhorov, N. N. Galtsov et al.
Stabilization of Interband Phase Solitons in Two-Band Noncentrosymmetric Superconducting Rings
Yuriy Yerin, Boris Malomed, Stefan-Ludwig Drechsler et al.
Strain-driven orbital-selective reconstruction and bicollinear-to-stripe evolution in FeTe
Zhenfeng Ouyang, Yin Chen, Yi-Heng Tian et al.
Supercurrent detection and manipulation of topological phase transitions in Shiba-Majorana hybrid systems
Debika Debnath, Ioannis Ioannidis, Paramita Dutta et al.
Exact pair density wave in topological moire flat bands and universal superfluid stiffness
Zhengzhi Wu, Ming-rui Li, Hong Yao
Electrical manipulation of oxygen stoichiometry in multiterminal YBa2Cu3O7-δ junctions
Daniel Stoffels, Caio C. Quaglio-Gomes, Nicolas Lejeune et al.