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Two-dimensional weak localization effects in high temperature superconductor Nd2-xCexCuO4-d

G. I. Harus, A. N. Ignatenkov, A. I. Ponomarev, L. D. Sabirzyanova, N. G. Shelushinina, A. A. Ivanov

cond-mat.supr-conarXiv:cond-mat/9912004

Abstract

A systematic study of the resistivity and Hall effect in single crystal Nd2-xCexCuO4-d films (0.12 < x < 0.20) is presented, with special emphasis on the low-temperature dependence of the normal state conductance. Two-dimensional weak localization effects are found both in a normally conducting underdoped sample (x = 0.12) and in situ superconducting optimally doped (x = 0.15) or overdoped (x = 0.18) samples in a high magnetic field B > Bc2. The phase coherence time and the effective thickness of a CuO2 conducting layer d (~ 1.5 A) have been estimated by fitting 2D weak localization theory expressions to the magnetoresistivity data for magnetic fields perpendicular to the ab plane and in plane. Estimates of the parameter d ensure the condition of strong carrier confinement and justify a model consisting of almost decoupled 2D metallic sheets for the Nd2-xCexCuO4-d single crystal.

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