Band structure analysis of the conduction-band mass anisotropy in 6H and 4H SiC
Walter R. L. Lambrecht, Benjamin Segall
Abstract
The band structures of 6H and 4H SiC calculated by means of the FP-LMTO method are used to determine the effective mass tensors for their conduction-band minima. The results are shown to be consistent with recent optically detected cyclotron resonance measurements and predict an unusual band filling dependence for 6H-SiC.
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