Expected behaviour of different semiconductor materials in hadron fields

Abstract

The utilisation of semiconductor materials as detectors and devices operating in high radiation environments, at the future particle colliders, in space applications or in medicine and industry, necessitates to obtain radiation harder materials. A systematic theoretical study has been performed, investigating the interaction of charged hadrons with semiconductor materials and the mechanisms of defect creation by irradiation. The mechanisms of the primary interaction of the hadron with the nucleus of the semiconductor lattice have been explicitly modelled and the Lindhard theory of the partition between ionisation and displacements has been considered. The behaviour of silicon, diamond, and some AIIIBV compounds, as GaAs, GaP, InP, InAs, InSb has been investigated. The nuclear energy loss, and the concentration of primary defects induced in the material bulk by the unit hadron fluence have been calculated. The peculiarities of the proton and pion interactions as well as the specific properties of the semiconductor material have been put in evidence.