Lorentz angle measurements in irradiated silicon detectors between 77 K and 300 K
W. de Boer, V. Bartsch, J. Bol, A. Dierlamm, E. Grigoriev, F. Hauler, S. Heising, O. Herz, L. Jungermann, T. Schneider
Abstract
Future experiments are using silicon detectors in a high radiation environment and in high magnetic fields. The radiation tolerance of silicon improves by cooling it to temperatures below 180 K. At low temperatures the mobility increases, which leads to larger deflections of the charge carriers by the Lorentz force. A good knowledge of the Lorentz angle is needed for design and operation of silicon detectors. We present measurements of the Lorentz angle between 77 K and 300 K before and after irradiation with a primary beam of 21 MeV protons.
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