An algorithm for calculating the Lorentz angle in silicon detectors
V. Bartsch, W. de Boer, J. Bol, A. Dierlamm, E. Grigoriev, F. Hauler, S. Heising, L. Jungermann
Abstract
Future experiments will use silicon sensors in the harsh radiation environment of the LHC (Large Hadron Collider) and high magnetic fields. The drift direction of the charge carriers is affected by the Lorentz force due to the high magnetic field. Also the resulting radiation damage changes the properties of the drift. In this paper measurements of the Lorentz angle of electrons and holes before and after irradiation are reviewed and compared with a simple algorithm to compute the Lorentz angle.
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