The influence of initial impurities and irradiation conditions on defect production and annealing in silicon for particle detectors

Abstract

Silicon detectors in particle physics experiments at the new accelerators or in space missions for physics goals will be exposed to extreme radiation conditions. The principal obstacles to long-term operation in these environments are the changes in detector parameters, consequence of the modifications in material properties after irradiation. The phenomenological model developed in the present paper is able to explain quantitatively, without free parameters, the production of primary defects in silicon after particle irradiation and their evolution toward equilibrium, for a large range of generation rates of primary defects. Vacancy-interstitial annihilation, interstitial migration to sinks, divacancy and vacancy-impurity complex (VP, VO, V2O, CiOi and CiCs) formation are taken into account. The effects of different initial impurity concentrations of phosphorus, oxygen and carbon, as well as of irradiation conditions are systematically studied. The correlation between the rate of defect production, the temperature and the time evolution of defect concentrations is also investigated.