Dissipative light field as a way to create strongly localized structures for atom lithography
O. N. Prudnikov, A. V. Taichenachev, A. M. Tumaikin, V. I. Yudin
Abstract
Generally, the conditions for deep sub-Doppler laser cooling do not match the conditions for the strong atomic localization that takes a place in deeper optical potential and, in consequence, leads to larger temperature. Moreover, for a given detuning in a deep optical potential the secular approximation which is usually used for quantum description of laser cooling becomes no more valid. Here we perform an analysis of atomic localization in optical potential based on a full quantum approach for atomic density matrix. We also show that the laser cooling in a deep far-off detuned optical potential, created by a light field with a polarization gradient, can be used as an alternative method for forming high contrast spatially localized structures of atoms for the purposes of atom lithography and atomic nanofabrication. Finally, we perform an analysis of the possible limits for the width and the contrast of localized atomic structures that can in principle be reached by this type of the light mask.
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