A miniature evaporator for in-operando deposition of isolated atoms in a low-temperature scanning tunneling microscope
Jeongmin Oh, Hermann Osterhage, Vasily Cherepanov, Sven Just, Denis Krylov, F. Stefan Tautz, Taner Esat, Ruslan Temirov
Abstract
Depositing dilute atomic ensembles onto cold samples is challenging in low-temperature scanning tunneling microscopes (STM) because radiation shields and restricted internal geometries often preclude a direct deposition path, particularly in instruments designed for millikelvin operation. We present a compact, milliwatt-range evaporation source fabricated from a commercial miniature incandescent lamp and integrated directly into a millikelvin STM head. The exposed tungsten filament is coated with a micrometre-thick Fe film and positioned about 1 cm from the sample. We deposit isolated Fe atoms onto MgO/Ag(100) while operating the microscope near 5 K. Evaporation increases the STM-body temperature by only about 2 K, and the same nanoscopic surface region can be readily scanned after deposition with a lateral displacement of less than 5 nm. Differential-conductance spectra displaying symmetric inelastic steps near 14 mV identify the deposited atoms on MgO as Fe. From STM images, we estimate a local deposition flux of 1.5×10-5~nm-2\,s-1, corresponding to a nominal evaporator lifetime of ~150 h. The fixed evaporator enables repeated low-flux deposition without a room-temperature line of sight, the need for movable radiation shields, or mechanical evaporator access after cooldown, while preserving access to the same atomic-scale surface region before and after deposition.
Create a lesson
Related papers
Distinguishing Quantum Capacitance Signatures of a Topological Majorana Wire from a Normal Wire Segment
Binayyak Bhusan Roy, Jay Deep Sau, Sumanta Tewari
Band's Geometry Origin of Quantum Spin Transport Phenomena
Elena Derunova, Mazhar N. Ali
Trapping e/4 quasiparticles in bilayer graphene
Mario Di Luca, Emily Hajigeorgiou, Ning Ma et al.
Scalable, Simple, and Versatile Encapsulation of 2D Materials and Devices
Gabriel Natale, Uma Chirkova, Flávio Henriques Feres et al.
Mobility Enhancement in Si/SiGe Quantum Well Enabled by a Buried Si Layer Trapping Oxygen Impurities
Felix Reichmann, Alberto Mistroni, Fabian Fidorra et al.
Occupation-Driven Josephson Diode in a Symmetric Junction
Jianxiong Zhai, Zelei Zhang, Jiawei Yan