PT and anti-PT phase transitions in a trimerized Su--Schrieffer--Heeger chain with nonreciprocal Rashba spin-orbit coupling
Milad Jangjan, Linhu Li, Longwen Zhou, Mir Vahid Hosseini
Abstract
We theoretically investigate a one-dimensional trimerized Su--Schrieffer--Heeger chain with three sublattices per unit cell subjected to a nonreciprocal Rashba spin-orbit coupling. Invoking a spin-flip symmetry, the non-Hermitian Hamiltonian decomposes into two independent spin sectors, enabling a spin-resolved analysis of non-Hermitian skin effects and system symmetries. We identify a rich phase diagram consisting of four bulk phases and two edge-state phases. The bulk phases include fully PT-unbroken (real-spectrum) and fully anti-PT-unbroken (imaginary-spectrum) regimes, as well as two mixed phases where one band remains on the real or imaginary axis while the other two form complex-conjugate pairs. The two edge-state phases correspond to topological edge modes with either PT-unbroken (real) or anti-PT-unbroken (imaginary) energies. Using non-Bloch band theory and Cardano's method, we derive closed-form expressions for phase boundaries and establish the bulk-edge correspondence for each spin sector. Calculations of Berry phase and directional inverse participation ratios confirm our analytical predictions. Our results provide a minimal platform for realizing spin-resolved non-Hermitian topology and edge-selective symmetry preservation, in which the bulk and edge states belong to distinct symmetry classes.
Create a lesson
Related papers
Distinguishing Quantum Capacitance Signatures of a Topological Majorana Wire from a Normal Wire Segment
Binayyak Bhusan Roy, Jay Deep Sau, Sumanta Tewari
Band's Geometry Origin of Quantum Spin Transport Phenomena
Elena Derunova, Mazhar N. Ali
Trapping e/4 quasiparticles in bilayer graphene
Mario Di Luca, Emily Hajigeorgiou, Ning Ma et al.
Scalable, Simple, and Versatile Encapsulation of 2D Materials and Devices
Gabriel Natale, Uma Chirkova, Flávio Henriques Feres et al.
Mobility Enhancement in Si/SiGe Quantum Well Enabled by a Buried Si Layer Trapping Oxygen Impurities
Felix Reichmann, Alberto Mistroni, Fabian Fidorra et al.
Occupation-Driven Josephson Diode in a Symmetric Junction
Jianxiong Zhai, Zelei Zhang, Jiawei Yan