Spin Susceptibility of a 2D Electron System in GaAs towards the Weak Interaction Region
Abstract
We determine the spin susceptibility in the weak interaction regime of a tunable, high quality, two-dimensional electron system in a GaAs/AlGaAs heterostructure. The band structure effects, modifying mass and g-factor, are carefully taken into accounts since they become appreciable for the large electron densities of the weak interaction regime. When properly normalized, decreases monotonically from 3 to 1.1 with increasing density over our experimental range from 0.1 to 4×1011 cm-2. In the high density limit, tends correctly towards 1 and compare well with recent theory.
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