On the current gap of single-electron transistors
Valentin V. Pogosov, Eugene V. Vasyutin
Abstract
Effects of the single-electron tunneling and the Coulomb blockade in a cluster structure (the molecular transistor) are investigated theoretically. In the framework of the particle-in-a-box model for the spherical and disk-shaped gold clusters, the electron spectrum, the temperature dependence of the chemical potential and the residual charge are calculated. We show that the residual charge is equal to the non-integer value of elementary charge e and depends on the cluster's shape. The equations for the analysis of the current-voltage characteristic are used under conservation condition for the total energy of the structure taking into account the contact potential difference. Restrictions associated with the Coulomb instability of a cluster are introduced into the theory in a the simple way. It is shown that the critical charge of the cluster in the open electron system is close to the residual charge. For single-electron transistors based on small gold clusters the current gap and its voltage asymmetry are computed. We demonstrate that the current gap exhibits non-monotonic size dependences, which are related to the quantization of the electron spectrum and the Coulomb blockade.
Create a lesson
Related papers
Distinguishing Quantum Capacitance Signatures of a Topological Majorana Wire from a Normal Wire Segment
Binayyak Bhusan Roy, Jay Deep Sau, Sumanta Tewari
Band's Geometry Origin of Quantum Spin Transport Phenomena
Elena Derunova, Mazhar N. Ali
Trapping e/4 quasiparticles in bilayer graphene
Mario Di Luca, Emily Hajigeorgiou, Ning Ma et al.
Scalable, Simple, and Versatile Encapsulation of 2D Materials and Devices
Gabriel Natale, Uma Chirkova, Flávio Henriques Feres et al.
Mobility Enhancement in Si/SiGe Quantum Well Enabled by a Buried Si Layer Trapping Oxygen Impurities
Felix Reichmann, Alberto Mistroni, Fabian Fidorra et al.
Occupation-Driven Josephson Diode in a Symmetric Junction
Jianxiong Zhai, Zelei Zhang, Jiawei Yan