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Differential conductance of a saddle-point constriction with a time-modulated gate-voltage

C. S. Tang, C. S. Chu

cond-mat.mes-hallarXiv:cond-mat/0603538

Abstract

The effect of a time-modulated gate-voltage on the differential conductance G of a saddle-point constriction is studied. The constriction is modeled by a symmetric saddle-point potential and the time-modulated gate-voltage is represented by a potential of the form V0 θ(a/2-|x-xc|) (ωt). For ω less than half of the transverse subband energy level spacing, gate-voltage-assisted (suppressed) feature occurs when the chemical potential μ is less (greater) than but close to the threshold energy of a subband. As μ increases, G is found to exhibit, alternatively, the assisted and the suppressed feature. For larger ω, these two features may overlap with one another. Dip structures are found in the suppressed regime. Mini-steps are found in the assisted regime only when the gate-voltage covers region far enough away from the center of the constriction.

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