Valley Polarization in Si(100) at Zero Magnetic Field
K. Takashina, Y. Ono, A. Fujiwara, Y. Takahashi, Y. Hirayama
Abstract
The valley splitting, which lifts the degeneracy of the lowest two valley states in a SiO2/(100)Si/SiO2 quantum well is examined through transport measurements. We demonstrate that the valley splitting can be observed directly as a step in the conductance defining a boundary between valley-unpolarized and polarized regions. This persists to well above liquid helium temperature and shows no dependence on magnetic field, indicating that single-particle valley splitting and valley-polarization exist in (100) silicon even at zero magnetic field.
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