Comment on "Performance of a spin based insulated gate field effect transistor" [cond-mat/0603260] [cond-mat/0603260]

Abstract

In a recent e-print [cond-mat/0603260] Hall and Flatte claim that a particular spin based field effect transistor (SPINFET), which they have analyzed, will have a lower threshold voltage, lower switching energy and lower leakage current than a comparable metal oxide semiconductor field effect transistor (MOSFET). Here, we show that all three claims of HF are invalid.