Single-mode heat conduction by photons
M. Meschke, W. Guichard, J. P. Pekola
Abstract
Electrical conductance is quantized in units of σ Q=2e2/h in ballistic one-dimensional conductors. Similarly, thermal conductance at temperature T is expected to be limited by the quantum of thermal conductance of one mode, G Q = πk B26T, when physical dimensions are small in comparison to characteristic wavelength of the carriers. The relation between σ Q and G Q obeys the Wiedemann-Franz law for ballistic electrons (apart from factor 2 in σ Q due to spin degeneracy), but somewhat amazingly the same expression of G Q is expected to hold also for phonons and photons, or any other particles with arbitrary exclusion statistics. The single-mode heat conductance is particularly relevant in nano-structures, e.g., when studying heat conduction by phonons in dielectric materials, or cooling of electrons in metals at very low temperatures. Here we show, based on our experimental results, that at low temperatures heat is transferred by photon radiation, in our case along a superconducting line, when electron-phonon as well as normal electronic heat conduction are frozen out. Thermal conductance is limited by G Q, approaching this value towards low temperatures. Our observation has implications on, e.g., performance and design of ultra-sensitive bolometers and electronic micro-refrigerators, whose operation is largely dependent on weak thermal coupling between the device and its environment.
Create a lesson
Related papers
Distinguishing Quantum Capacitance Signatures of a Topological Majorana Wire from a Normal Wire Segment
Binayyak Bhusan Roy, Jay Deep Sau, Sumanta Tewari
Band's Geometry Origin of Quantum Spin Transport Phenomena
Elena Derunova, Mazhar N. Ali
Trapping e/4 quasiparticles in bilayer graphene
Mario Di Luca, Emily Hajigeorgiou, Ning Ma et al.
Scalable, Simple, and Versatile Encapsulation of 2D Materials and Devices
Gabriel Natale, Uma Chirkova, Flávio Henriques Feres et al.
Mobility Enhancement in Si/SiGe Quantum Well Enabled by a Buried Si Layer Trapping Oxygen Impurities
Felix Reichmann, Alberto Mistroni, Fabian Fidorra et al.
Occupation-Driven Josephson Diode in a Symmetric Junction
Jianxiong Zhai, Zelei Zhang, Jiawei Yan