Two-dimensional electrons occupying multiple valleys in AlAs
M. Shayegan, E. P. De Poortere, O. Gunawan, Y. P. Shkolnikov, E. Tutuc, K. Vakili
Abstract
Two-dimensional electrons in AlAs quantum wells occupy multiple conduction-band minima at the X- points of the Brillouin zone. These valleys have large effective mass and g-factor compared to the stan-dard GaAs electrons, and are also highly anisotropic. With proper choice of well width and by applying symmetry-breaking strain in the plane, one can control the occupation of different valleys thus rendering a system with tuneable effective mass, g-factor, Fermi contour anisotropy, and valley degeneracy. Here we review some of the rich physics that this system has allowed us to explore.
Create a lesson
Related papers
Distinguishing Quantum Capacitance Signatures of a Topological Majorana Wire from a Normal Wire Segment
Binayyak Bhusan Roy, Jay Deep Sau, Sumanta Tewari
Band's Geometry Origin of Quantum Spin Transport Phenomena
Elena Derunova, Mazhar N. Ali
Trapping e/4 quasiparticles in bilayer graphene
Mario Di Luca, Emily Hajigeorgiou, Ning Ma et al.
Scalable, Simple, and Versatile Encapsulation of 2D Materials and Devices
Gabriel Natale, Uma Chirkova, Flávio Henriques Feres et al.
Mobility Enhancement in Si/SiGe Quantum Well Enabled by a Buried Si Layer Trapping Oxygen Impurities
Felix Reichmann, Alberto Mistroni, Fabian Fidorra et al.
Occupation-Driven Josephson Diode in a Symmetric Junction
Jianxiong Zhai, Zelei Zhang, Jiawei Yan