Quantum conductance of graphene nanoribbons with edge defects
T. C. Li, Shao-Ping Lu
Abstract
The conductance of metallic graphene nanoribbons (GNRs) with single defects and weak disorder at their edges is investigated in a tight-binding model. We find that a single edge defect will induce quasi-localized states and consequently cause zero-conductance dips. The center energies and breadths of such dips are strongly dependent on the geometry of GNRs. Armchair GNRs are much more sensitive to a vacancy than zigzag GNRs, but are less sensitive to a weak scatter. More importantly, we find that with a weak disorder, zigzag GNRs will change from metallic to semiconducting due to Anderson localization. But a weak disorder only slightly affects the conductance of armchair GNRs. The influence of edge defects on the conductance will decrease when the widths of GNRs increase.
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