Impurity States in Graphene
T. O. Wehling, A. V. Balatsky, M. I. Katsnelson, A. I. Lichtenstein, K. Scharnberg, R. Wiesendanger
Abstract
Defects in graphene are of crucial importance for its electronic and magnetic properties. Here impurity effects on the electronic structure of surrounding carbon atoms are considered and the distribution of the local densities of states (LDOS) is calculated. As the full range from near field to the asymptotic regime is covered, our results are directly accessible by scanning tunnelling microscopy (STM). We also include exchange scattering at magnetic impurities and eludicate how strongly spin polarized impurity states arise.
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