Dephasing Time of Two-Dimensional Holes in GaAs Open Quantum Dots

Abstract

We report magnetotransport measurements of two-dimensional holes in open quantum dots, patterned either as a single-dot or an array of dots, on a GaAs quantum well. For temperatures T below 500 mK, we observe signatures of coherent transport, namely, conductance fluctuations and weak antilocalization. From these effects, the hole dephasing time τφ is extracted using the random matrix theory. While τφ shows a T-dependence that lies between T-1 and T-2, similar to that reported for electrons, its value is found to be approximately one order of magnitude smaller.

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