Impact of interface roughness on perpendicular transport and domain formation in superlattices
Andreas Wacker, Antti-Pekka Jauho
Abstract
A microscopic calculation of the perpendicular current in doped multiple quantum wells is presented. Interface roughness is shown to affect the resonant transitions as well as to cause a nonresonant background current. The theoretical characteristics exhibit several branches due to the formation of electric field domains in quantitative agreement with experimental data.
Create a lesson
Related papers
Parametric Glassiness in Graphene-based Electronic Lévy Glass
Caue N. da Silva, Diego B. Fonseca, Adauto J. F. de Souza et al.
Giant geometric nonlinear transport in inhomogeneously strained Bi2Se3 single crystalline slabs
Igor Veremchuk, Pavlo Makushko, Anita Guarino et al.
Controlling the Atomic Reconstruction in Twisted MoSe2/WSe2 with a Monolayer hBN Spacer
Johannes Figueiredo, Kaiyuan Chen, Aubrey Penn et al.
Pulse-by-pulse imaging of reversible, collective reshaping in laser-excited gold nanorods
Mees Dieperink, Loriane Monin, Ichiro Ohnishi et al.
Atomic Edge Resonators Flatten Phonon Bands in Biphenylene Nanoribbons
V. L. Katkov, N. M. Chtchelkatchev, V. A. Osipov
Theory of exciton-exciton interactions in crystalline systems
L. Maisel Licerán, H. T. C. Stoof