Impact of interface roughness on perpendicular transport and domain formation in superlattices
Andreas Wacker, Antti-Pekka Jauho
Abstract
A microscopic calculation of the perpendicular current in doped multiple quantum wells is presented. Interface roughness is shown to affect the resonant transitions as well as to cause a nonresonant background current. The theoretical characteristics exhibit several branches due to the formation of electric field domains in quantitative agreement with experimental data.
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